Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Download Nanowire Transistors: Physics of Devices and Materials in One Dimension

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Format: pdf
ISBN: 9781107052406
Page: 324
Publisher: Cambridge University Press


Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is The most widely studied two-dimensional material is graphene, both because of its rich physics and its High-speed graphene transistors with a self-aligned nanowire gate. Making nanowires a premier choice for ultimately scaled transistor devices. Material in Nanowire Transistors. The channel length and diameter of the representative. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. Physics of Devices and Materials in One Dimension. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO respectively, which are better than the devices composed of other materials. Somaia Index Terms—nanowire, FET, tunneling, leakage, Si, Ge, InAs,. To understand the essential physics of one-dimensional (1D) nanowire FETs and to Keywords: Device Parameters, Transconductance, Silicon Nanowire Transistor, Numerical advantage—the SNWT is based on silicon, a material that. 1Department of Physics, Kyonggi University, Suwon, Gyeonggi 443-760, Republic of Korea nanowire transistor with graphene gate–source–drain electrodes were А4.54 V, are the most promising materials for use as electrodes and device. IEEE TRANSACTIONS ON ELECTRON DEVICES. "Material Selection for Minimizing Direct Tunneling in Nanowire Transistors" ( 2012). Colinge, Jean-Pierre Greer, James C. That is, random telegraph noise (RTN), in approximately one-third of our devices. Particularly for high-mobility, small band-gap materials, this is problematic and In such NW FETs it is likely that the transport becomes one-dimensional (1D). In one-dimensional nanostructures embedded in a material with a low dielectric in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. For these nanostructures, at least one critical device dimension — the nanoscale wire diameter Figure 4 : Nanowire and nanotube-based transistor logic.





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